Low-Temperature Annealing of ArsenidPhosphoms Junctions

The formation of arsenic and phosphorus junctions is an important process step in modern device fabrication. The accurate prediction of the vertical and lateral profile is crucial for optimization of the device behavior and reliability. Experimental data show that the damage from implantation of the dopant species has an important and controlling effect on the final profile during low-temperature annealing. Modeling of the dopant and point defect interaction during this anneal indicates that the junction is determined by the number of point defects created during the implantation. This model is compared to experimental data and good agreement is shown for both oneand twodimensional results.